PART |
Description |
Maker |
CY7C1345G-100AXC CY7C1345G-100AXI |
4-Mbit (128 K × 36) Flow-Through Sync SRAM
|
Cypress Semiconductor
|
CY7C1475V33-133BGXI CY7C1475V33-133BGI CY7C1475V33 |
72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBLArchitecture 4M X 18 ZBT SRAM, 8.5 ns, PBGA165 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBLArchitecture 4M X 18 ZBT SRAM, 6.5 ns, PQFP100 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL Architecture(带NoBL结构B>72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM) 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL?/a> Architecture 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL垄芒 Architecture
|
Cypress Semiconductor, Corp. Cypress Semiconductor Corp.
|
M58LR128GU |
The M58LR128GU/L and M58LR256GU/L are 128 Mbit (8 Mbit x16) and 256 Mbit (16 Mbit
|
ST Microelectronics, Inc.
|
CAT64LC20ZS CAT64LC20ZP CAT64LC20J-TE7 CAT64LC20J- |
36-Mbit QDR-II SRAM 4-Word Burst Architecture 36-Mbit QDR-II SRAM 2-Word Burst Architecture 9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL Architecture 4-Mbit (128K x 36) Pipelined SRAM with NoBL Architecture 4-Mbit (128K x 36) Flow-through SRAM with NoBL Architecture 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBL Architecture SPI Serial EEPROM SPI串行EEPROM 36-Mbit QDR™-II SRAM 2-Word Burst Architecture SPI串行EEPROM 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM SPI串行EEPROM 256K (32K x 8) Static RAM SPI串行EEPROM
|
Analog Devices, Inc. Electronic Theatre Controls, Inc.
|
M48T128Y-70PM1 M48T128Y-80PM1 M48T128V-70PM1 M48T1 |
5.0 or 3.3 V, 1 Mbit (128 Kb x 8) TIMEKEEPER庐 SRAM 5.0 or 3.3 V, 1 Mbit (128 Kb x 8) TIMEKEEPER? SRAM
|
STMicroelectronics
|
M36P0R9070E0 |
512 Mbit Flash memory 128 Mbit (Burst) PSRAM
|
Numonyx
|
M36L0T7050B2 M36L0T7050T2 |
(M36L0T7050T2 / M36L0T7050B2) 128 Mbit Flash memory and 32 Mbit PSRAM
|
Numonyx
|
AT52SC1283J |
128-Mbit Flash 32-Mbit PSRAM Stack Memory.
|
Atmel
|
M36L0R7050B0 |
128 Mbit Flash Memory 32 Mbit PSRAM
|
STMicroelectronics
|
M36LLR8760 M36L0R7050 M36L0R7050B0ZAQE M36L0R7050B |
128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 32 Mbit (2M x16) PSRAM, 1.8V Supply Multi-Chip Package 128兆位(多银行,多层次,突发)闪存32兆位00万16)移动存储芯片,1.8V电源多芯片封 CAP 2.2PF 200V 0.5PF C0H DIP-2 BULK S-MIL-C-39014 ER 23C 16 12 8 4 SKT RECP WALL CAP 0.1UF 50V 10% X7R DIP-2 BULK P-MIL-C-39014 128 Mbit (Multiple Bank / Multi-Level / Burst) Flash Memory 32 Mbit (2M x16) PSRAM From old datasheet system
|
STMicroelectronics N.V. ST Microelectronics 意法半导 STMICROELECTRONICS[STMicroelectronics]
|
M36L0R7060B1 M36L0R7060B1ZAQE M36L0R7060B1ZAQF M36 |
128 Mbit (Multiple Bank, Multilevel, Burst) Flash memory and 64 Mbit (Burst) PSRAM, 1.8 V supply, multichip package
|
Numonyx B.V
|